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APT40N60JCU2
ISOTOP(R) Boost chopper
Super Junction MOSFET Power Module
K
VDSS = 600V RDSon = 70m max @ Tj = 25C ID = 40A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch Features *
D
G
S
* * *
- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration
S G D
K
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
ISOTOP
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25C Tc = 80C
Tc = 25C
mJ A
Tc = 80C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APT40N60JCU2 - Rev 1 June, 2006
Max ratings 600 40 30 120 20 70 290 20 1 1800 30 39
Unit V A V m W A
APT40N60JCU2
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 20A VGS = VDS, ID = 1mA VGS = 20 V, VDS = 0V
3
Max 25 250 70 3.9 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 40A Resistive Switching VGS = 15V VBus = 380V ID = 40A R G = 1.8 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 40A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 40A, R G = 5
Min
Typ 7015 2565 212 259 29 111 20 30 115 10 670 980 1100 1206
Max
Unit pF
nC
ns
J
J
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APT40N60JCU2 - Rev 1 June, 2006
APT40N60JCU2
Chopper diode ratings and characteristics
Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/s IF = 30A VR = 400V di/dt =200A/s Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/s Min Typ 1.6 1.9 1.4 44 Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C 23 85 160 4 8 130 700 70 1300 30 ns Max 1.8 250 500 Unit V A pF
Tj = 125C Tj = 25C Tj = 125C
A nC ns nC A
Thermal and package characteristics
Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min CoolMos Diode 2500 -55
Typ
Max 0.43 1.21 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
29.2
Typical CoolMOS Performance Curve
0.5 0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.5 Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
0.9 0.7
0.1 0.05
0.1 0.05 0.0001
Single Pulse
0 0.00001
0.001 0.01 0.1 Rectangular Pulse Dur ation (Seconds)
1
10
Fig 1, Maximum Effective transient thermal Impe dance, Junction to case vs Pulse Duration
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APT40N60JCU2 - Rev 1 June, 2006
0.15
0.3
APT40N60JCU2
45 40 ID, DC Drain Current (A) 35 30 25 20 15 10 5 0 25 50 75 100 125 150 T C, Case Tem perature (C)
Figure 6, DC Drain Current vs Case Temperature
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APT40N60JCU2 - Rev 1 June, 2006
APT40N60JCU2
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APT40N60JCU2 - Rev 1 June, 2006
APT40N60JCU2
Typical Diode Performance Curve
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APT40N60JCU2 - Rev 1 June, 2006
APT40N60JCU2
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APT40N60JCU2 - Rev 1 June, 2006
APT40N60JCU2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Cathode
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APT40N60JCU2 - Rev 1 June, 2006
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG".

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